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Si was diffused along the evaporated Al layer of an integrated-circuit structure at temperatures between 360 and 560 °C, and the resulting concentration profile analyzed by electron microprobe. The Si solubility was found to agree with literature values for Si in wrought Al. The Si diffusivity was found to be substantially enhanced, however, probably due to a high density of imperfections in the evaporated Al film. Our measured diffusivities indicate an activation energy EA ≃ 0. 8 eV, about 40% less than the value for Si in wrought Al.

The crystallization behavior of evaporated TiO2-SiO2 mixed composition films and its dependence on composition, temperature, time and type of mixing (codeposited or alternating layers) were studied. All codeposited films annealed between 600 and 900 °C with 15%–90% molar TiO2 exhibited crystallization in the anatase phase. Crystallite size increased with Ti content of the film and with temperature. TiO2 in alternating layered films, which had layer thicknesses in the 65–1000 Å range, crystallized in the anatase phase in the 400–600 °C range, with thin layered films requiring higher temperatures for crystallization. For temperatures of 900–1100 °C, codeposited films were transformed into rutile films, whereas alternating layered films remained as anatase. Diffusivity of Ti in the mixed composition film was calculated to be 3×10−14 and 3×10−13 cm2/s from the study of precipitation kinetics at 950 and 1050 °C, respectively. Morphology of intermediate composition analog films (25%–65% atomic TiO2) remained virtually unaltered from its as-deposited state after annealing and crystallization.

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Thin films of several refractory metal oxides and Ge were deposited by pulsed laser evaporation using a TEA CO(2) laser. Films deposited on ambient temperature substrates had a polycrystalline microstructure. Ge films deposited on 300 degrees C substrates were single crystalline. The refractive indices of these films were higher than indices of films deposited by conventional evaporation techniques and were bulk values for HfO(2) and ZrO(2). The crystalline microstructure and high packing density of the films were attributed to the effect of energetic ions in the laser-induced plasma.