Articles you may be interested inEvolution of end-of-range damage and transient enhanced diffusion of indium in silicon Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon Appl. Phys. Lett. 75, 3844 (1999); 10.1063/1.125475 The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon Appl. Phys. Lett. 71, 3105 (1997); 10.1063/1.120260Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon Transient enhanced diffusion of indium implanted in silicon is studied in the presence of the end-of-range ͑EOR͒ damage layer. To investigate the effect of EOR defects on the indium diffusion, the samples that were implanted with indium at a high dose (1ϫ10 13 -5ϫ10 14 /cm 2 ) sufficient to produce the amorphous layer were prepared. Transmission electron microscopy measurements and Rutherford backscattering spectrometry reveal the amorphization threshold of indium implantation is around 5ϫ10 13 /cm 2 for 200 keV, 115 In ϩ implanted with 100 A/cm 2 beam current density at room temperature. These results are consistent with Monte Carlo simulation of implantation. Monte Carlo simulations indicate the deviation from the plus one model due to the mass effect of indium. After amorphization, following both RTA at 1000°C and furnace anneal at low temperature ͑650 and 850°C) in nitrogen ambient showed the formation of extrinsic EOR dislocation loops below the original amorphous/crystalline interface. During this process, strong segregation of indium toward the EOR dislocation loops is clearly observed. The profile shift of indium at a concentration of 1 ϫ10 17 atoms/cm 3 is not proportional to the implanted dose. Since most interstitials condense into EOR dislocation loops, diffusivity enhancement of indium is not proportional to the implant dose above amorphization threshold.

No abstract

No abstract

No abstract

No abstract