The band-gap narrowing at 300 K in n-type moderately doped silicon is investigated, basing on a second-order Thomas-Fermi model which was first developed by Friedel and recently by Van Cong e t al. There are three contributions t o band-gap narrowing: (1) AEg,opt (rigid-band effect), (2) rn (non-rigid band effect), and (3) AEg,FD (Fermi-
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.