Band‐Gap Narrowing in n‐Type Moderately Doped Silicon at 300 K

Vancong, H.

doi:10.1002/pssb.2221170218

Physica Status Solidi (b)

1983

DOI: 10.1002/pssb.2221170218

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Band‐Gap Narrowing in n‐Type Moderately Doped Silicon at 300 K

H. Vancong

Abstract: The band-gap narrowing at 300 K in n-type moderately doped silicon is investigated, basing on a second-order Thomas-Fermi model which was first developed by Friedel and recently by Van Cong e t al. There are three contributions t o band-gap narrowing: (1) AEg,opt (rigid-band effect), (2) rn (non-rigid band effect), and (3) AEg,FD (Fermi-

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1986

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Cited by 8 publications

References 22 publications

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About a critical thickness of the passive layer on iron at the flade potential

Pinkowski¹

1986

Materials & Corrosion

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An analysis of capacitance potential data of passive iron on the basis of the theory of critical states yields a critical point near the Flade potential EF. The critical point is characterized by a minimal critical thickness of the passive layer of about 1.3 nm at EF, yielding a field strength within the passive film of 4.6 . 106 Vcm-'. The Flade potential can be interpreted within the framework of the PIN model of the iron passive layer (91 as the minimal external "force", necessary for the formation of stoichiometric y-Fez03. The system behavior near the critical point can be appropriate described by the short range order or lattice gas model.Eine Analyse von Kapazitats-Potential-Messungen an passivem Eisen auf der Grundlage der Theorie der kritischen Zustande ergibt einen kritischen Punkt in der Nahe des Flade-Potentials EF. Der kritische Punkt ist charakterisiert durch eine minimale kritixhe Schichtdicke von etwa 1,3 nm bei EF, entsprechend einer Feldstarke innerhalb der Passivschicht von 4,6 . 106 Vcm-'. Im Rahmen des PIN-Modells der Eisenpassivschicht f9] kann das made-Potential als die minimale adere ,,Kraft" gedeutet werden, die erforderlich ist, um stochiometrisches y-Fe,03 zu erzeugen. Das Verhalten des Systems in der Nahe des kritischen Punktes kann am besten durch das Gitter-Gas-Modell beschrieben werden.

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About a critical thickness of the passive layer on iron at the flade potential

Pinkowski¹

1986

Materials & Corrosion

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Effective electric field in the n‐type moderately doped region of silicon devices at 300 K

Cong

Brunet

Charar

et al. 1983

Physica Status Solidi (b)

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Recently, Shibib et al. /1/ and Van Cong et al. /2/ reported a relation that describes the effect of band-gap narrowing (BCN) on the effective electric field experienced by the minority-carrier holes in the n-type heavily doped emitter region of silicon p-n junction solar cells. Accurate models of this effective electric field are important for understanding and improving device performance, not only for solar cells /1 to 3/, but also for other junction devices such as high-accuracy photodetectors /4/. Our previous theory of BGN. /2/ is more applicable to heavily doped materials than to moderately doped semiconductors typically used in devices /3/.The purpose of this note is to investigate the effective electric field E acting on the minority-carrier holes in n-type moderately doped silicon at 300 K, in which the donor concentration range 1s found to be 1 0 2 3 . 5~1 0 which will be referred to as I.

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Transport Parameters in the n‐Type Moderately Doped Region of Silicon Devices at 300 K

Cong

Charar

Brunet

et al. 1983

Physica Status Solidi (b)

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BYIn our previous papers /1 , 2/, which will be referred t o as I and II, we investigated the band-gap narrowing and the effective electric fie1d.h the n-type moderately doped region of silicon devices at 300 K, basing on a screeeffect by dense donors studied in the spirit of the second-order Thomas-Fermi model.The purpose of this note is to calculate the transport parameters in the n-tgpe moderately doped region of silicon devices at 300 K, such as electronand-hole diffusion coefficients (Dn and D ) and hole diffusion length (L ).given in the electrical model are found to be, respectively, as P P Calculation of D and D From I, the electron and hole concentrations nwhere N : = Nc(Nd/no), qo = (Ei -Ez)/kT, and A E band-gap narrowing, no and p the electron and hole concentrations in the classical model (see Section 2 of I). It should be noted that, for N d s 3 . 3 8~l O~~ m-3, N s n relation between the electron diffusion coefficient Dn and the electron mobility p (1. e. , ~~/ p~ = ( N P ) k~ (a %/a N~) /3/) one gets first from (1 ): (6 N p G) = */N:exp( G), and therefore denotes the optical g, opt 0 23 while, for Nd > 3.36xl.O m-', Nd > no. Thus, from a general d 0' n 1 ) Av. Villeneuve, F-66 a 5 Perpignan Cedex, France. 2) Rectorat de Bordeaux, 5, Rue Joseph de Carayon Latour, 33 060 Bordeaux CBdex, France. 6 physica (b)

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Band‐Gap Narrowing in n‐Type Moderately Doped Silicon at 300 K

Cited by 8 publications

References 22 publications

About a critical thickness of the passive layer on iron at the flade potential

About a critical thickness of the passive layer on iron at the flade potential

Effective electric field in the n‐type moderately doped region of silicon devices at 300 K

Transport Parameters in the n‐Type Moderately Doped Region of Silicon Devices at 300 K

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