MOCVD TiSiN was evaluated as a barrier for Cu interconnects application. The TiSiN f i l m was formed by Si% soaking of MOCVD TiN. The TiSiN film showed improved wetting and adhesion to Cu as well as less stress hysteresis in its integration with Cu. The low stress hysteresis yields higher resistance to Cu void generation during hot storage testing. Electrical tests on DLM Cu test structures demonstrated comparable line and via chain resistance and equivalent line-to-line leakage current in BTS testing compared to conventional PVD Ta(N).