The authors have demonstrated an effective method to obtain high light output power of GaN-based light-emitting diodes (LEDs) by simultaneous enhancement of internal quantum efficiency and light extraction efficiency. Micropit InGaN∕GaN LEDs were fabricated on hexagonal-shaped GaN template through wet-etched substrate patterning. The result indicated that under optimized growth condition of high temperature GaN template, micropits could be formed and distributed in an aligned manner by growing on wet-etch patterned sapphire substrate. The LED structures showed superior optical output power, which directly resulted from not only effective elimination of threading dislocation of the epitaxial layers but also significant increase in light extraction efficiency via the inclined facets of aligned micropits.

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We studied the voltage–dependent liquid crystal (LC) dynamic stability corresponding to the pixel edge shape in the fringe field switching (FFS) mode. LC dynamics is very unstable near the edge of the pixel slit, where there is a horizontally different field direction compared with the active region, particularly when the slit angle decreases to 3°. Actually, there are strong field competitions near the edge of the pixel slit due to the patterned pixel shape. Also, a dark disclination line (D/L) at the domain boundary is generated with increasing operation voltage and the D/L extends into the active area at a high applied voltage. It is possible to control LC dynamics near the pixel edge by using different pixel edge shapes. In this paper, we propose an advanced edge shape. This shape has no reverse twist region, unlike the conventional structure, and therefore, LC dynamics is very stable near the edge of the pixel slit. This result indicates that a pixel edge shape with no reverse twist is very important in the design of a high-image-quality FFS mode.