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The desorption rate of In atoms from an InAs surface and its dependence on surface As coverage is reported. InAs films were grown by molecular beam epitaxy on fully strained 1 monolayer thick In0.75Ga0.25As films deposited on (001) InAs substrates. Using a sensitive technique based on reflection high-energy electron diffraction, the desorption rate for In is found to be highly dependent on the As coverage. During a sublimation process, where In from an InAs surface is desorbed, the desorption rate at 510 °C is five times greater for a group III stabilized surface than for an As-stabilized surface. The difference in desorption rate is believed to be related to changes in the In to surface bond strengths.

In recent years, ruthenium (Ru) has been focused on the new semi‐insulated doping material for InP instead of Fe. Semi‐insulated InP is essential for the blocking layer of high modulation speed laser diode in terms of the capacitance and heat dissipation. In this paper, we have investigated the electric characteristic of Ru doped InP (Ru‐InP) which works both electron and hole trap characteristics. We fabricated n‐InP/Ru‐InP/n‐InP (n/Ru/n‐InP) and p‐InP/Ru‐InP/p‐InP (p/Ru/p‐InP) structure by Metal Organic Vapor Phase Epitaxy (MOVPE), and evaluated I‐V characteristics of its structure. It turned out from this experiment that the volume resistivity of p/Ru/p‐InP structure was higher than that of n/Ru/n‐InP. The resistivity of p/Ru/p‐InP was almost equal to that of n/Fe/n‐InP. We applied the Ru‐InP to the Buried‐Heterostructure DFB Laser as current blocking layer. We confirmed that the temperature dependence of LD characteristics was improved, and the output power was over 10mW even at 70 °C (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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