25.8Gbps Direct Modulation AlGaInAs DFB Lasers with Ru-doped InP Buried Heterostructure for 70°C operation

Sakiano, G.; Takiguchi, T.; Hokama, Y.; Nagira, Takashi; Yamaguchi, H.; Ishimura, E.; Sugitatsu, Atsushi; Shimura, Takaaki

doi:10.1364/ofc.2012.oth3f.3

Cited by 7 publications

(3 citation statements)

References 2 publications

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“…High-speed directly modulated lasers are attracting attention as light sources to meet these demands because this type of light source has low power consumption and a small footprint. There have been some reports on the 25 Gbit/s operation of directly modulated lasers [1][2][3][4]. However, only a few results on 28 Gbit/s directly modulated lasers have been reported [5].…”

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confidence: 99%

1.3 μm InGaAlAs asymmetric corrugation‐pitch‐modulated DFB lasers with high mask margin at 28 Gbit/s

et al. 2014

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Direct modulation of a 1.3 µm InGaAlAs asymmetric corrugationpitch-modulated (ACPM) distributed feedback (DFB) laser operated at 28 Gbit/s was experimentally demonstrated. The laser exhibits linear light-current characteristics and a high-frequency response with a small roll-off at low frequency compared with a conventional λ/4-shifted DFB laser. Moreover, it attains a high mask margin (20%) under 28 Gbit/s operation at 55°C. These superior properties are due to a superior ACPM grating that suppresses longitudinal spatial hole-burning.Introduction: With the explosive growth of Internet/Intranet traffic, high-speed optical transceivers for 100 GbE should reduce power consumption and module sizes. High-speed directly modulated lasers are attracting attention as light sources to meet these demands because this type of light source has low power consumption and a small footprint. There have been some reports on the 25 Gbit/s operation of directly modulated lasers [1][2][3][4]. However, only a few results on 28 Gbit/s directly modulated lasers have been reported [5]. Operation at 28 Gbit/s is important for transmitting data with the OTU4 frame format.We recently reported 28 Gbit/s directly modulated DFB lasers with an asymmetric corrugation-pitch-modulated (ACPM) grating [6]. In this Letter, the static and dynamic properties of the ACPM distributed feedback (DFB) laser are investigated through comparison with a quarterwavelength (λ/4)-shifted DFB laser. The ACPM grating suppresses the longitudinal spatial hole-burning [7]. It is experimentally demonstrated that ACPM DFB lasers have linear light-current characteristics and a high-frequency response with small roll-off at low frequency, compared with the conventional λ/4-shifted DFB lasers. This superior frequency response of the ACPM lasers enables 28 Gbit/s operation with a high mask margin (MM) of 20% at 55°C.

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confidence: 99%

1.3 μm InGaAlAs asymmetric corrugation‐pitch‐modulated DFB lasers with high mask margin at 28 Gbit/s

et al. 2014

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“…Though this flaw can be compensated by deeper grating etching, the wafer structure and etching process should be specially designed. Here, the buried heterostructure (BH) waveguide is applied for improving the performance of the laser array with lower threshold, higher output power, and higher operation temperature . In this article, the experiment results show that the threshold currents from 6 mA to 9 mA are first achieved at 1550 nm at room temperature.…”

Section: Introductionmentioning

confidence: 97%

Integrated buried heterostructure DFB laser array for WDM systems based on reconstruction equivalent chirp technique

Song

Wang

et al. 2015

Microw. Opt. Technol. Lett.

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used for an overall look at the very first design steps, noise figure is tried to be matched in first stage without much compromise in gain, return loss, and bandwidth. Considering the selected bias points and these constraints, minimum noise figure is found near 70 GHz. However, in full layout simulations, this frequency shifted to 60 GHz being 4 dB and, at 77 GHz, noise figure is simulated as 4.45 dB. From the simulations, it is seen that the measured results almost overlaps the simulation results in gain and return loss performances.In Figure 7, input and output power handling performances extracted from the simulations of each are presented. From the results, it is seen that LNA1, LNA2, and LNA3 have output 1 dB compression points of 26, 210, and 24 dBm. Furthermore, LNA3 has a 5.5 dBm of OIP3 (output third-order intercept point) from two-tone intermodulation simulations.In Table 1, some of the state-of-the-art LNAs (mostly SiGe technology for a proper comparison including some other technologies) operating in W-band are shown. According to the results of proposed LNA3, highest bandwidth and gain with low noise figure are extracted while input and output return losses are better than 10 dB for the whole frequency band which implies that LNA3 could be used as a complete amplifier, not requiring any off-chip matching networks. CONCLUSIONThis article presents the results of fabricated W-band LNA chips that were built using the SiGe BiCMOS 0.13 mm SG13G2 technology of IHP Microelectronics. The chips are designed based on common-emitter topology with cascode, single-ended, and multi-stage configurations. Among these chips, the three-stage single-ended HBT-based amplifier offers an ultra-wideband operation to be utilized in W-band automotive and imaging applications. To the best of the authors' knowledge, this design achieves one of the best overall performances compared to other W-band LNAs (see Table 1).ACKNOWLEDGMENT ABSTRACT: A four-antenna multiple-input multiple-output (MIMO) system with the most compact radiators for small mobile terminals is presented in this letter. The MIMO antenna has four identical elements which are positioned in each corner of the PCB board. Each antenna element consists of an L-shaped radiator and two interdigital shorting stubs, producing the 2.4/5.2/5.8 GHz wireless local area network bands with a small size of only 6.5 3 9 mm 2 . Two different isolation structures are introduced simultaneously to mitigate mutual coupling between various elements. Consequently, mutual coupling less than 215 dB at both Figure 8 Characteristics of spectrum and SMSR values by changing the temperature. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com]

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“…Ruthenium (Ru)-doped InP has been focused on as a suitable semi-insulating dopant for InP [1]. Using Ru-InP as the current blocking layer in buried-heterostructure (BH) lasers, our group developed an AlGaInAs BH laser that was able to operate at over 75 C [2]. We have also investigated the electrical properties of Ru-InP, and we obtained a resistivity of 2×10 7 cm as required for a semi-insulating blocking layer when the Ru concentration in InP was 5×10 17 cm -3 [3].…”

Section: Introductionmentioning

confidence: 99%

Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration

Yamaguchi

Nagira

Kawazu

et al. 2014

26th International Conference on Indium Phosphide and Related Materials (IPRM)

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Short-Abstract-We investigated the Zn concentration dependence of Zn diffusion from Zn-doped InP (Zn-InP) to Rudoped InP (Ru-InP). As semi-insulated InP, Ru-InP shows advantages in terms of higher resistivity and lower capacitance when Ru-InP is sandwiched by Zn-InP. Control of the diffusion of Zn from the adjacent Zn-InP layer is required to achieve laser diodes with superior characteristics. In this paper, we examined the diffusion of Zn at a Ru-InP stacking structure sandwiched by Zn-InP using metal-organic vapor phase epitaxy.

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25.8Gbps Direct Modulation AlGaInAs DFB Lasers with Ru-doped InP Buried Heterostructure for 70°C operation

Cited by 7 publications

References 2 publications

1.3 μm InGaAlAs asymmetric corrugation‐pitch‐modulated DFB lasers with high mask margin at 28 Gbit/s

1.3 μm InGaAlAs asymmetric corrugation‐pitch‐modulated DFB lasers with high mask margin at 28 Gbit/s

Integrated buried heterostructure DFB laser array for WDM systems based on reconstruction equivalent chirp technique

Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration

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