Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH ) in p-channel MOSFETs has enabled a simplified gate-first high-κ/metal gate (HKMG) CMOS integration flow. Integrating Silicon-Germanium channels (cSiGe) on silicon wafers for SOC applications has unique challenges like the oxidation rate differential with silicon, defectivity and interface state density in the unoptimized state, and concerns with T inv scalability. In overcoming these challenges, we show that we can leverage the superior mobility, low threshold voltage and NBTI of cSiGe channels in high-performance (HP) and low power (LP) HKMG CMOS logic MOSFETs with multiple oxides utilizing dual channels for nFET and pFET.Introduction:

An impeller of a supersonic centrifugal compressor was tested in a casing without a diffuser so that the flow range was not limited by the diffuser. Regarding the impeller, emphasis was placed on critical conditions such as inducer stall and surge. Experimental data were examined based on a one-dimensional analysis and a quasi-three-dimensional analysis. Furthermore, the variation of shroud pressure with respect to time at many locations was utilized to guess the details of flow behavior between impeller blades near the shroud, and the contour of isobars was compared with that predicted by a quasi-three-dimensional analysis. When the inlet relative velocity was supersonic, a detached shock wave and a shock wave in a blade channel were recognized, but the compressor operated efficiently, although such condition existed only in a narrow flow range limited by surge and choke.

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We developed a less layout-dependent epitaxially grown SiGe (eSiGe) source/drain (S/D) technique for pFET. We found that the effective stressor region of eSiGe existed only near the channel and that the volume effect of eSiGe was small. On the basis of this mechanism, a new recess RIE and a new epitaxial growth technology were developed, so that the gate-pitch dependence, S/D length dependence and channel width dependence were extremely reduced. In addition, we succeeded in increasing the drive current by improving the eSiGe structure and the impurity profile. We also obtained a high drive current of 750 uA/um at Vdd=1V, Ioff=100nA/um.