Neuroendocrine carcinoma (NEC) is a rare tumor, comprising < 1% of stomach cancers. A 55-year-old woman was referred to our hospital with biopsy-proven gastric cancer. A shallow ulcerative lesion was detected in the lesser curvature of the lower body. It was suspected to be early gastric cancer IIA + IIC type. Thus, endoscopic submucosal dissection was performed. She was subsequently diagnosed with NEC, which is aggressive and carries a poor prognosis. We conducted a radical resection and a laparoscopic-assisted distal gastrectomy. The tumor had infiltrated the subserosal layer and 6/42 lymph nodes were involved. The mitotic index was 16/10 high power fields and the Ki-67 labeling index was 26%-50%. The final diagnosis of NEC was made according to the World Health Organization 2010 criteria. She was suspected of having jumping metastasis to the proximal margin. The patient was treated with an oral anticancer drug (5-flurouracil based drug) for 2 years. The patient has been followed up for 3 years without recurrence.

It is well‐known that the alkali doping of polycrystalline Cu 2 ZnSn(S,Se) 4 (CZTSSe) and Cu(In,Ga)(Se,S) 2 has a beneficial influence on the device performance and there are various hypotheses about the principles of performance improvement. This work clearly explains the effect of Na doping on the fill factor (FF) rather than on all of the solar cell parameters (open‐circuit voltage, FF, and sometimes short circuit current) for overall performance improvement. When doping is optimized, the fabricated device shows sufficient built‐in potential and selects a better carrier transport path by the high potential difference between the intragrains and the grain boundaries. On the other hand, when doping is excessive, the device shows low contact potential difference and FF and selects a worse carrier transport path even though the built‐in potential becomes stronger. The fabricated CZTSSe solar cell on a flexible metal foil optimized with a 25 nm thick NaF doping layer achieves an FF of 62.63%, thereby clearly showing the enhancing effect of Na doping.

An efficient carrier transport is essential for enhancing the performance of thin-film solar cells, in particular Cu­(In,Ga)­Se2 (CIGS) solar cells, because of their great sensitivities to not only the interface but also the film bulk. Conventional methods to investigate the outcoming carriers and their transport properties measure the current and voltage either under illumination or dark conditions. However, the evaluation of current and voltage changes along the cross-section of the devices presents several limitations. To mitigate this shortcoming, we prepared gently etched devices and analyzed their properties using micro-Raman scattering spectroscopy, Kelvin probe force microscopy, and photoluminescence measurements. The atomic distributions and microstructures of the devices were investigated, and the defect densities in the device bulk were determined via admittance spectroscopy. The effects of Ga grading on the charge transport at the CIGS–CdS interface were categorized into various types of band offsets, which were directly confirmed by our experiments. The results indicated that reducing open-circuit voltage loss is crucial for obtaining a higher power conversion efficiency. Although the large Ga grading in the CIGS absorber induced higher defect levels, it effectuated a smaller open-circuit voltage loss because of carrier transport enhancement at the absorber–buffer interface, resulting from the optimized conduction band offsets.

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Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces. Here, we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic devices under mechanical stress. Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation. The electronic structure of CZTSSe was deformed with stress as the band gap, valence band edge, and work function changed. Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na. The local open-circuit voltage (VOC) on the bent CZTSSe surface decreased due to limited carrier excitation. The reduction of local VOC occurred larger with convex bending than in concave bending, which is consistent with the degradation of device parameters. This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.