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As the number of antenna elements increases in massive multiple-input multiple-output-based radios such as fifth generation mobile technology (5G), designing true multi-band base-station transmitter, with efficient physical size, power consumption and cost in emerging cellular frequency bands up to 10 GHz, is becoming a challenge. This demands a hard integration of radio components, particularly the radio's digital application-specific integrated circuits (ASIC) with high performance multi-band data converters. In this work, a novel radio frequency digital-to-analog converter (RF DAC) solution is presented, that is also capable of monolithic integration into today's digital ASIC due to its digital-in-nature architecture. A voltage-mode conversion method is used as output stage, and configurable mixing logic is employed in the data path to create a higher frequency lobe and utilize the output signal in the first or the second Nyquist zone. This 12-bit RF DAC is designed in a 22 nm FDSOI CMOS process, and shows excellent linearity performance for output frequencies up to 10 GHz, with no calibration and no trimming techniques. The achieved linearity performance is able to fulfill the high requirements of 5G base-station transmitters. Extensive Monte-Carlo analysis is performed to demonstrate the performance reliability over mismatch and process variation in the chosen technology.

A direct digital-to-RF converter (DRFC) is presented in this work. Due to its digital-in-nature design, the DRFC benefits from technology scaling and can be monolithically integrated into advance digital VLSI systems. A fourthorder single-bit quantizer bandpass digital Σ∆ modulator is used preceding the DRFC, resulting in a high in-band signal-to-noise ratio (SNR). The out-ofband spectrally-shaped quantization noise is attenuated by an embedded semidigital FIR filter (SDFIR). The RF output frequencies are synthesized by a novel configurable voltage-mode RF DAC solution with a high linearity performance.The configurable RF DAC is directly synthesizing RF signals up to 10 GHz in first or second Nyquist zone. The proposed DRFC is designed in 22 nm FDSOI CMOS process and with the aid of Monte-Carlo simulation, shows 78.6 dBc and 63.2 dBc worse case third intermodulation distortion (IM3) under process mismatch in 2.5 GHz and 7.5 GHz output frequency respectively.