We propose a theoretical ground for emissive capacitively coupled radio-frequency (rf) plasma sheath under low pressure. The rf sheath is assumed to be collisionless and oscillates with external source. A known sinusoidal voltage instead of current is taken as prerequisite to derive sheath dynamics. Kinetic studies are performed to determine mean wall potential as a function of secondary emission coefficient and applied voltage amplitude, with which the complete mean direct current sheath is resolved. Analytical analyses under homogeneous model and numerical analyses under inhomogeneous model are conducted to deduce real-time sheath properties including space potential, sheath capacitance, and stochastic heating. Obtained results are validated by a continuum kinetic simulation without ionization. The influences of collisionality and ionization induced by secondary electrons are elucidated with a particle-in-cell simulation, which further formalizes proposed theories and inspires future works. K E Y W O R D S capacitively coupled plasma, kinetic theory, modeling, secondary electron emission, surfaces

Inside Front Cover: We establish a theoretical ground for capacitively coupled plasma (CCP) considering ion‐induced secondary electron emission (SEE) under low pressure. Plasma parameters are derived from kinetic theory including density, potential, sheath capacitance, power balance etc. Space potential is determined as a sum of time‐averaged component and oscillating component. The former is determined by emission coeffi cient and applied voltage, while the latter has limited relevance with SEE. A numerical model for quick estimation of CCP parameters is presented as well. Further details can be found in the article by Guang‐Yu Sun, Han‐Wei Li, An‐Bang Sun, Yuan Li, Bai‐Peng Song, Hai‐Bao Mu, Xiao‐Ran Li, and Guan‐Jun Zhang (https://doi.org/10.1002/ppap.201900093).