The electrical properties of diarylethene photoswitching molecular devices on flexible substrates are studied. When exposed to UV or visible light, diarylethene molecular devices show two electrical states (a high and a low conductance state) with a discrepancy of an order of magnitude in the level of current between the two states. The diarylethene flexible molecular devices exhibit excellent long‐time stability and reliable electrical characteristics in both conductance states when subjected to various mechanical stresses.
The electrical properties of ferrocene-alkanethiolate self-assembled monolayers (SAMs) on a high yield solid-state device structure are investigated. The devices are fabricated using a conductive polymer interlayer between the top electrode and the SAM on both silicon-based rigid substrates and plasticbased fl exible substrates. Asymmetric electrical transport characteristics that originate from the ferrocene moieties are observed. In particular, a distinctive temperature dependence of the current (i.e., a decrease in current density as temperature increases) at a large reverse bias, which is associated with the redox reaction of ferrocene groups in the molecular junction, is found. It is further demonstrated that the molecular devices can function on fl exible substrates under various mechanical stress confi gurations with consistent electrical characteristics. This study enhances the understanding of asymmetric molecules and may lead to the development of functional molecular electronic devices on both rigid and fl exible substrates.
The electrical properties of ferrocene‐alkanethiolate molecular devices on both rigid and flexible substrates are studied on page 2472 by D. Xiang, T. Lee, and team. A distinctive temperature dependence of the current (i.e., a decrease in current as temperature increases) upon an applied bias polarity is observed, which is associated with the redox of ferrocene groups in the junctions. The flexible molecular devices function consistently under various mechanical stress configurations.
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