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Device simulations of two-dimensional structures with a huge lateral extension indicate that the combination of lateral current flow and a vertical reduction of space-charge region are necessary for the filament formation during the shortcircuit operation of IGBTs and the turn-off of diodes. The shape of the electric-field distribution is introduced as new criterion to estimate the rising branch of the short-circuit destruction curve in the I c -V ce SOA-diagram. The impact of the stray inductance L stray and the gate resistor R G on the short-circuit destruction limit are experimentally investigated. The presented results allow a deeper understanding of the different electrical short-circuit failure mechanisms (turn-on, quasi-stationary state, turn-off) and their relation to one another.

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