Exploring brain‐inspired synaptic devices has recently become a new focus of research in nanoelectronic communities. In this emerging field, incorporating 2D materials into three‐terminal synaptic transistors has brought various advantages. However, achieving a stable and long‐term weight‐modulation in these synaptic transistors, which are typically based on interface charge storage, is still a challenge due to the nature of their spontaneous relaxation. The application of an atomically thin fluorographene layer into the synaptic junction region suppresses this issue and improves the efficiency, tunability, and symmetry of the synaptic plasticity as well as establishing a stable weight‐regulation paradigm. These unique properties can be attributed to the dipolar rotation of CF in fluorographene. To obtain a better physical understanding, a vacancy‐dependent CF dipolar rotation model is proposed and supported by hysteresis analysis and density functional theory calculations. As proposed and demonstrated, the unique fluorographene‐based synaptic transistor may be a promising building block for constructing efficient neuromorphic computing hardware.

The fast development of the Internet of things (IoT) promises to deliver convenience to human life. However, a huge amount of the data is constantly generated, transmitted, processed, and stored, posing significant security challenges. The currently available security protocols and encryption techniques are mostly based on software algorithms and pseudorandom number generators that are vulnerable to attacks. A true random number generator (TRNG) based on devices using stochastically physical phenomena has been proposed for auditory data encryption and trusted communication. In the current study, a Bi2O2Se-based memristive TRNG is demonstrated for security applications. Compared with traditional metal–insulator–metal based memristors, or other two-dimensional material-based memristors, the Bi2O2Se layer as electrode with non-van der Waals interface, high carrier mobility, air stability, extreme low thermal conductivity, as well as vertical surface resistive switching shows intrinsic stochasticity and complexity in a memristive true analogue/digital random number generation. Moreover, those analogue/digital random number generation processes are proved to be resilient for machine learning prediction.

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi 2 O 2 Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi 2 O 2 Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi 2 O 2 Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi 2 O 2 Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

A tailor made strategy for graphene toward logic application was proposed and demonstrated in this work based on its intrinsic dimensionally anisotropic properties: a graphene based three terminal resistive random access memory.