Nanostructures that feature nonreciprocal light transmission are highly desirable building blocks for realizing photonic integrated circuits. Here, a simple and ultracompact photonic‐crystal structure, where a waveguide is coupled to a single nanocavity, is proposed and experimentally demonstrated, showing very efficient optical diode functionality. The key novelty of the structure is the use of cavity‐enhanced material nonlinearities in combination with spatial symmetry breaking and a Fano resonance to realize nonreciprocal propagation effects at ultralow power and with good wavelength tunability. The nonlinearity of the device relies on ultrafast carrier dynamics, rather than the thermal effects usually considered, allowing the demonstration of nonreciprocal operation at a bit‐rate of 10 Gbit s−1 with a low energy consumption of 4.5 fJ bit−1.

Fano resonances appear in quantum mechanical as well as classical systems as a result of the interference between two paths: one involving a discrete resonance and the other a continuum. Compared to a conventional resonance, characterized by a Lorentzian spectral response, the characteristic asymmetric and "sharp" spectral response of a Fano resonance is suggested to enable photonic switches and sensors with superior characteristics. While experimental demonstrations of the appearance of Fano resonances have been made in both plasmonic and photonic-crystal structures, the control of these resonances is experimentally challenging, often involving the coupling of near-resonant cavities. Here, we experimentally demonstrate two simple structures that allow surprisingly robust control of the Fano spectrum. One structure relies on controlling the amplitude of one of the paths and the other uses symmetry breaking. Short-pulse dynamic measurements show that besides drastically increasing the switching contrast, the transmission dynamics itself is strongly affected by the nature of the resonance. The influence of slow-recovery tails implied by a long carrier lifetime can thus be reduced using a Fano resonance due to a hitherto unrecognized reshaping effect of the nonlinear Fano transfer function. For the first time, we present a system application of a Fano structure, demonstrating its advantages by the experimental realization of 10 Gbit/s all-optical modulation with bit-error-ratios on the order of 10 -7 for input powers less than 1 mW. These results represent a significant improvement compared to the use of a conventional Lorentzian resonance.Ultra-compact photonic structures that perform optical signal processing such as modulation and switching at high-speed with low-energy consumption are essential for enabling integrated photonic chips that can meet the growing demand for information capacity . It remains, however, an important task to identify and demonstrate PhC structures that can meet the low-energy and high-bandwidth requirement. In cavity-based switches an applied control signal changes the refractive index of the cavity, thereby shifting the cavity resonance and modulating the transmission of the data signal. The shape of the transmission spectrum is then very important, since it determines the refractive

Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but few device configurations has been explored for a deterministic control of a space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible -near-infrared, zero-bias and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, with quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this study is the first demonstration of post-fabrication-free two-dimensional material active silicon photonic devices.

Free-electron radiation phenomena facilitate enticing potential to create light emission with highly tunable spectra, covering hard-to-reach frequencies ranging from microwave to X-ray. Consequently, they take part in many applications such as on-chip light sources, particle accelerators, and medical imaging. While their spectral tunability is extremely high, their polarizability is usually much harder to control. Such limitations are especially apparent in all free electron based spontaneous radiation sources, such as the Smith−Purcell (SP) radiation. Here, anomalous free-electron radiation phenomenon is demonstrated at the microwave regime from gradient bianisotropic metasurfaces, by using a phased dipole array to mimics moving charged particles. The phase gradient and the bianisotropy in metasurfaces provide new degrees of freedom for the polarization shaping of free-electron radiation, going beyond the common spectral and angular shaping. Remarkably, the observed anomalous free-electron radiation obeys a generalized SP formula derived from Fermat's principle.

Recent advances in engineered material technologies (e.g., photonic crystals, metamaterials, plasmonics, etc.) provide valuable tools to control Cherenkov radiation. In all these approaches, however, the particle velocity is a key parameter to affect Cherenkov radiation in the designed material, while the influence of the particle trajectory is generally negligible. Here, we report on surface Dyakonov–Cherenkov radiation, i.e. the emission of directional Dyakonov surface waves from a swift charged particle moving atop a birefringent crystal. This new type of Cherenkov radiation is highly susceptible to both the particle velocity and trajectory, e.g. we observe a sharp radiation enhancement when the particle trajectory falls in the vicinity of a particular direction. Moreover, close to the Cherenkov threshold, such a radiation enhancement can be orders of magnitude higher than that obtained in traditional Cherenkov detectors. These distinct properties allow us to determine simultaneously the magnitude and direction of particle velocities on a compact platform. The surface Dyakonov–Cherenkov radiation studied in this work not only adds a new degree of freedom for particle identification, but also provides an all-dielectric route to construct compact Cherenkov detectors with enhanced sensitivity.