Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.

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Through magnetotransport measurements, we investigate ultrasmooth graphene bilayer nanoribbons obtained by multiwall carbon nanotube unzipping, under a high magnetic field up to 55 T. The high quality of the samples allows us to observe a Hall quantization in ribbons as narrow as 20 nm. The presence, for certain samples, of isolated peaks in the resistance plateau is found to be related to a very moderate long-range disorder, which induces magnetic-field-dependent interedge scattering. Tight-binding numerical simulations of electron transport illustrate and confirm this picture. Our study provides important insights into the quantum Hall effect in quasi-1D systems and indicates possible lines for future investigations of the nonchiral edge states induced by zigzag nanoribbon sections.