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We report on recent developments of a‐Si:H/a‐Si:H based thin film solar cells on Gen8.5 module area. The initial efficiency of 5.7 m² modules and 1.4 m² sub‐modules has been increased from 5% to 8% using standard floatline, low‐cost glass substrates coated with SnO2:F front TCO. The improvements based on optimizations of the n1/p2 tunnel recombination junction and of the p/i interfaces. The device simulation software AFORS‐HET has been extended with an improved model for the n/p junction to describe measured module properties. Model input parameters are taken from measured properties of single thin films. The presented progress indicates the high potential of thin‐film silicon based solar cells produced on large area. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Abstract. In recent years, scatterometry has become one of the most commonly used methods for CD metrology. With decreasmg structure size for future technology nodes, the search for optimized scatterometry measurement configurations gets more important to exploit maximum sensitivity. As widespread industrial scatterometry tools mainly still use a pre-set measurement configuration, there are still free parameters to improve sensitivity. Our current work uses a simulation based approach to predict and optimize sensitivity of future technology nodes. Since line edge roughness is getting important for such small structures, these imperfections of the periodic continuation cannot be neglected. Using fourier methods like e.g. rigorous coupled wave approach (RCWA) for diffraction calculus, nonperiodic features are hard to reach. We show that in this field certain types of fieldstitching methods show nice numerical behaviour and lead to useful results.