This paper aims to develop the next-generation manufacturing method of plasma display panels (PDPs) which is superior in costperformance and environmental damage to current methods, by introducing the lift-off process in place of the etching process. The lift-off process, which has been applied in the LSI fields, has been faced problems caused by inappropriate resist profiles, such as difficulty in resist removal and low pattern accuracy. Moreover, in PDP processes, inappropriate profiles cause more serious problems. In this paper, the inversely tapered and T-shaped resist profile is proposed, and its feasibility is experimentally proved. For proper design of the proposed profile, deposition model onto the profile is discussed, and a method based on the model is given.

The structure of 4-methoxy-ONN-azoxybenzene (1α) has been determined by X-ray analysis. In sulfuric acid 1α gave a rearrangement product 4-hydroxy-4′-methoxyazobenzene, together with 4-methoxyazobenzene and 4-methoxy-NNO-azoxybenzene.

No abstract

Because it has longer life and uses much less power than filament lighting, LED is expected to be the next-generation lighting device. Moreover, taking advantage of its special properties, LED's are not limited to general lighting. There have been advances in the application of LED's to LCD's and car headlamps. To raise the luminosity efficiency of LED's, the metallic reflective film with the highest reflectivity is used. As a reflective film material, Ag has the highest reflectivity in the visual light range (400–800nm) and is used in many cases. However, Ag is a thermally active material and we have concerns about the decrease in reflectivity by aggregation and heat treatment sulfuration. In this study we investigate an ultra high heat proof protective film for a thin Ag reflective film. Conventionally, SiO2 thin film is used as a protective film for Ag reflective film, but it is difficult to obtain heat proofing > 473K. In this research we consider a SnO2 protective film which combines high heat proofing and high crystallinity. We formed a SnO2 protective film on an Ag thin film under various conditions, and investigated its heat proofing characteristics. We succeeded in obtaining ultra-high heat proofing exceeding 773K using several 10 nm protective film. Furthermore, in trying to understand the mechanism of this outstanding high heat proofing reflective film system, it became clear that the crystallinity in high temperature diffusion plays a major role. In addition, we have found the possible beginnings of a general theory for high temperature stability for nanotechnology.

No abstract