No abstract

No abstract

Secondary ion mass spectrometry (SIMS) is a technically matured analysis technique for the investigation of depth and lateral distributions in solids. The ''raw data'' of a SIMS measurement provides only qualitative information. For quantification so-called relative sensitivity factors (RSF) are mandatory. To our knowledge no RSFs have been determined for Cu 2 O and CuO so far. In this work the RSFs for 21 elements in Cu 2 O and 14 elements in CuO have been determined via ion implanted standards. For the RSF determination we present the plateau method (Section 3) for box-like implantation profiles.This method provides a lower uncertainty in RSF value compared to the obtained uncertainty using single implantation profiles. In addition, we have estimated the electron affinities of NO 2 , AsO 2 and SbO to 0.55, 2.7 and 2.85 eV, respectively. Unexpectedly, we observe for Cu 2 O and CuO nearly identical RSF values. This behaviour cannot be attributed to a change in chemical composition caused by the SIMS sputter process. Furthermore, the calculated RSFs have been used to determine the impurity concentrations of our sputtered copper oxide thin films.