Quantification of impurity concentration in Cu₂O and CuO via secondary ion mass spectrometry

Abstract

Secondary ion mass spectrometry (SIMS) is a technically matured analysis technique for the investigation of depth and lateral distributions in solids. The ''raw data'' of a SIMS measurement provides only qualitative information. For quantification so-called relative sensitivity factors (RSF) are mandatory. To our knowledge no RSFs have been determined for Cu 2 O and CuO so far. In this work the RSFs for 21 elements in Cu 2 O and 14 elements in CuO have been determined via ion implanted standards. For the RSF determination we present the plateau method (Section 3) for box-like implantation profiles.This method provides a lower uncertainty in RSF value compared to the obtained uncertainty using single implantation profiles. In addition, we have estimated the electron affinities of NO 2 , AsO 2 and SbO to 0.55, 2.7 and 2.85 eV, respectively. Unexpectedly, we observe for Cu 2 O and CuO nearly identical RSF values. This behaviour cannot be attributed to a change in chemical composition caused by the SIMS sputter process. Furthermore, the calculated RSFs have been used to determine the impurity concentrations of our sputtered copper oxide thin films.

The influence of nitrogen doping on the electrical and vibrational properties of Cu2O

“…For the nominally undoped samples, we find a nitrogen concentration [N] of (6.8 ± 5.9) × 10 19 and (5.7 ± 2.1) × 10 18 cm −3 for the RF and DC sputtered films, respectively. The latter value is somewhat below the lower detection limit of the instrument and, therefore, not entirely reliable . We observe a linear increase of the nitrogen concentration over one order of magnitude as a function of the nitrogen flow‐rate during growth.…”

“…The nitrogen content in the thin films was determined by secondary ion mass spectroscopy (SIMS) utilizing a Cameca‐Riber MIQ256 system, which is equipped with an oxygen primary ion source with 6 keV primary ion beam energy. For a quantitative analysis, we used relative sensitivity factors (RSF) obtained by investigating ion‐implanted standards . For the electrical characterization, a cloverleaf structure was transferred onto the samples by means of photolithography and wet‐chemical etching.…”

High-resolution photoelectron spectroscopy analysis of sulfidation of brass at the rubber/brass interface

“…The result of peak fitting of the Cu 2p 3/2 core level is also shown. (c) Wagner plot for various copper-containing species; open circles for metallic Cu [13,[18][19][20][21], × for brass [13,22], open triangles and diamonds for Cu 2 O and CuO, respectively [13,18,[20][21][22][23], filled triangles for Cu 2 S [13,20,24,25], and filled diamonds for CuS [20,24,25]. Large diamonds with a cross inside are the data of the present study.…”

“…The Cu 2p peaks are slightly skewed toward the higher-binding-energy side, and this is due to the existence of a subcomponent at 933.5 eV (Cu 2p 3/2 ). The energy position of the subcomponent implies that there exist Cu(II) species, possibly in the form of CuO [13,18,[20][21][22][23], although a satellite structure characteristic of the Cu(II) configuration is not apparent. The binding energy of the main Cu 2p 3/2 component (932.6 eV) coincides with that of Cu(0) or Cu(I) species [13,[18][19][20][21].…”

Special wettable nanostructured copper mesh achieved by a facile hot water treatment process

“…XPS measurement on the mesh surface after HWT has been performed to verify the corresponding chemical state and composition. XPS spectra 7 in Figure 4 reveals the Cu2p state at 932.4 eV and an atomic composition of ~30% O and 70% Cu, which all indicate the formation of Cu2O [19,20,48].…”