We review herein the development of unipolar n-type polymer semiconductors in organic fieldeffect transistors, which would enable large-scale deployment of printed electronics in combination with a fast-growing area of p-type counterparts. After discussing general features of electron transport in organic semiconductors, various π-conjugated polymers that are capable of transporting electrons are selected and summarized to outline the design principles for enhancing electron mobility and stability in air. The n-type polymer semiconductors with high electron mobility and good stability in air share common features of low-lying frontier molecular orbital energy levels achieved by design. In this review, materials are listed in roughly chronological order of the appearance of the key building blocks, such as various arylene diimides, or structural characteristics, including nitrile and fluorinated groups, in order to present the progress in the area of n-type polymers.

In this study, thermally conductive composite films were fabricated using an anisotropic boron nitride (BN) and hybrid filler system mixed with spherical aluminum nitride (AlN) or aluminum oxide (Al2O3) particles in a polyimide matrix. The hybrid system yielded a decrease in the through-plane thermal conductivity, however an increase in the in-plane thermal conductivity of the BN composite, resulting from the horizontal alignment and anisotropy of BN. The behavior of the in-plane thermal conductivity was theoretically treated using the Lewis–Nielsen and modified Lewis–Nielsen theoretical prediction models. A single-filler system using BN exhibited a relatively good fit with the theoretical model. Moreover, a hybrid system was developed based on two-population approaches, the additive and multiplicative. This development represented the first ever implementation of two different ceramic conducting fillers. The multiplicative-approach model yielded overestimated thermal conductivity values, whereas the additive approach exhibited better agreement for the prediction of the thermal conductivity of a binary-filler system.

This Paper proposes novel microstrip slow-wave resonator, which is made by etching a portion of conventional 50-ohm half-wavelength resonator. The proposed resonator is able to control spurious response with a compactfilter size because ofthe effects ofslow-wave. Experimental results shows that it is possible to design a compact bandpassfilter with a wide upper stopband using the proposed resonators.

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