A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials is hexagonal boron nitride (hBN).Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, non-contact approach, which also allows for device design flexibility, produces no material wastage and offers compatibility with almost any surface of interest, including flexible substrates.In this work we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 ± 0.3 nF cm -2 for a dielectric thickness of ~3 µm and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 ± 1.7. The inkjet printed hBN dielectric has a breakdown field of 1.9 ± 0.3 MV cm -1 . Fully printed capacitors with sub-µm hBN layer thicknesses have also been demonstrated. The capacitors are then exploited in two fully printed demonstrators: a resistor-capacitor (RC) low-pass filter and a graphene-based field effect transistor.
As potentially or actually harmful ingredients are identified in commercial products, the goal is to replace them with safer alternatives. Yet a chemical ingredient is hardly a modular component that can be easily switched out. Further, replacement could remove one hazard and introduce others. To avoid this stymieing problem and ease an innovator’s choice of ingredients, Lavoie et al. report on a decision-making approach developed by the EPA’s Design for Environment program. A few case experiences illustrate its utility and recommend further use.
We propose and demonstrate a novel physical computing paradigm based on an engineered unipolar memristor that exhibits symmetric SET switching with respect to voltage polarity. A one-dimensional array of these devices was sufficient to demonstrate an efficient Hamming distance comparator for two strings of analog states represented by voltages from the physical world. The comparator first simultaneously applies the two sets of voltages to the array of memristors, each of which is initially in its high resistance state and switches to its low resistance state only if the two voltages applied on that memristor differ by more than the switching threshold. An accurate analog representation of the Hamming distance is then obtained by applying a reading voltage to the memristors and summing all the resultant currents. The comparator with a small footprint can directly process analog signals and store computation results without power, representing a promising application for analog computing based on memristor crossbar arrays.
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