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This paper presents a novel RF small-signal equivalent circuit model and parameter extraction for 3 nm nanosheet gate-all-around field effect transistor (GAAFET). The extrinsic parasitic effect induced by ground-signal-ground (GSG) layout is evaluated by 3D full-wave electromagnetic simulation, and an improved five-step analytical parameter extraction method is proposed for such extrinsic GSG layout. The model parameters for the intrinsic device are analytically determined with the help of nonlinear rational function fitting. The accuracy of the proposed extraction method was confirmed via comparisons between device simulator and electromagnetic simulator with frequency responses up to 300 GHz. Excellent agreement is obtained between the simulated and modeled S-parameters, and the calculated error is lower than 2.689% for the extrinsic layout, and 0.897% for the intrinsic device in the whole frequency range among multi-bias points.