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This study is for fan-out wafer-level packaging with chip-first (die face-up) formation. Chips with Cu contact-pads on the front side and a die attach film on the backside are picked and placed face-up on a temporary-glass-wafer carrier with a thin layer of light-to-heat conversion material. It is followed by compression molding with an epoxy molding compound (EMC) and a post-mold cure on the reconstituted wafer carrier and then backgrinding the molded EMC to expose the Cu contact-pads of the chips. The next step is to build up the redistribution layers (RDLs) from the Cu contact-pads and then mount the solder balls. This is followed by the debonding of the carrier with a laser and then the dicing of the whole reconstituted wafer into individual packages. A 300-mm reconstituted wafer with a package/die ratio = 1.8 and a die-top EMC cap = 100 μm has also been fabricated (a total of 325 test packages on the reconstituted wafer). This test package has three RDLs; the line width/spacing of the first RDL is 5 μm/5 μm, of the second RDL is 10 μm/10 μm, and of the third RDL is 15 μm/15 μm. The dielectric layer of the RDLs is fabricated with a photosensitive polyimide and the conductor layer of the RDLs is fabricated by electrochemical Cu deposition (ECD).

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