This work presents a methodology for the simulation of bonding wires under the circumstance when signals with RF frequencies are employed and thus, the impedances of the parasitic resistances, capacitances and inductances of these interconnections are no longer negligible. A s-parameters extraction strategy for each of the wirebonds will be shown with the help of Agilent’s EM simulator ADS resulting in a netlist in spectre which will be used in the test-bench of the designed IC to emulate the behavior of the bondwires and thus making possible a proper dimensioning and tuning of the RF chip to ensure a better performance of the encapsulated RF IC. Finally the design example of a power amplifier is proposed and some aspects of the interaction of this block with the wirebonds are studied.

This paper evaluates and compares the development of Multi-Chip Module Deposited (MCM-D) technology using photosensitive benzocyclobutene (BCB) with the non-photosensitive BCB to fabricate passive devices. The polymer was used to isolate the metal/interconnection layers and also as the dielectric for the capacitors. Ni-P/Au was used as the conductor film and Ta2N as the resistor film. The resistors’ sheet resistance was measured with both transfer length method (TLM) and direct measurement while the measurements of the capacitors and inductors required the use of a Vector Network Analyzer (VNA) and some mathematical algorithms.

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