Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates J. Vac. Sci. Technol. A 31, 01A136 (2013); 10.1116/1.4770291Magnetically tunable properties related with carriers density in self-doped La 1 − x MnO 3 / y wt % Nb -SrTiO 3 heteroepitaxial junctions Nb-doped SrTiO, (STO) thin films (Nb, O

The citric acid‐hydrogen peroxide‐water system has been developed for preferential etching of normalGaAs through photoresist masks. Etching rates depend strongly on the composition of the solution and on the crystal orientation of normalGaAs , with the rates in the order (111)B > (100) > (111)A. Flat‐bottomed holes were obtained for all compositions of the solutions. The solution does not erode photoresist masks, thereby providing preferential etching of normalGaAs through such masks.

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Silver selenide has been prepared by the melt growth method and coprecipitation method. The X-ray diffraction and differential thermal analysis have been investigated. The superlattice has been observed on the coprecipitation-grown silver selenide after heat treatment. It is very important from the stand point of obtaining a superlattice structure, that the heat treatment temperature be between 150°C and 300°C. A new phase transition of silver selenide due to the formation of a superlattice has been observed in the vicinity of 100°C. The Seebeck coefficient, resistivity and thermal conductivity have been measured as a function of temperature.

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