The aberration-corrected scanning transmission electron microscope allows probes to be formed with less than 1-Å diameter, providing sufficient sensitivity to observe individual Hf atoms within the SiO 2 passivating layer of a HfO 2 / SiO 2 / Si alternative gate dielectric stack. Furthermore, the depth resolution is sufficient to localize the atom positions to half-nanometer precision in the third dimension. From a through-focal series of images, we demonstrate a three-dimensional reconstruction of the Hf atom sites, representing a three-dimensional map of potential breakdown sites within the gate dielectric.

High-resolution electron microscopy, electron energy-loss spectroscopy, and first-principles theory are used to investigate the composition and electronic structure of HfO 2 dielectric layers deposited directly onto Si. A thin, nonstoichiometric, but Hf-free SiO 2 layer forms between the HfO 2 dielectric and the substrate, consistent with one-dimensional spinodal decomposition. Rapid thermal annealing crystallizes the HfO 2 , and the resulting grain boundaries within the HfO 2 are found to be O-depleted, with localized states within the bandgap. These localized states are thought to act as significant leakage pathways, and may be responsible for Fermi-level pinning at the dielectric/ contact interface.

We investigated the elastic modulus behavior of crystalline InAs/amorphous Al2O3 core-shell heterostructured nanowires with shell thicknesses varying between 10 and 90 nm by conducting in situ tensile tests inside a transmission electron microscope (TEM). Counterintuitively, the elastic modulus behaviors of InAs/Al2O3 core-shell nanowires differ greatly from those of bulk-scale composite materials, free from size effects. According to our results, the elastic modulus of InAs/Al2O3 core-shell nanowires increases, peaking at a shell thickness of 40 nm, and then decreases in the range of 50-90 nm. This abnormal behavior is attributed to the continuous decrease in the elastic modulus of the Al2O3 shell as the thickness increases, which is caused by changes in the atomic/electronic structure during the atomic layer deposition process and the relaxation of residual stress/strain in the shell transferred from the interfacial mismatch between the core and shell materials. A novel method for estimating the elastic modulus of the shell in a heterostructured core-shell system was suggested by considering these two effects, and the predictions from the suggested method coincided well with the experimental results. We also found that the former and latter effects account for 89% and 11% of the change in the elastic modulus of the shell. This study provides new insight by showing that the size dependency, which is caused by the inhomogeneity of the atomic/electronic structure and the residual stress/strain, must be considered to evaluate the mechanical properties of heterostructured nanowires.