Yttria (Y2 O3 ) films have been grown on Si (100) and Si (111) substrates heated at 800 °C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the heteroepitaxial growth of Y2 O3 films on Si (100) and Si (111) substrates. The (111) oriented Y2 O3 films are grown directly on Si (111) substrates. The (100) oriented Y2 O3 films are grown on the thin (Y2 O3 )0.09 (ZrO2 )0.91 layer predeposited on Si (100) substrates instead of direct growth on Si (100) substrates.

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Yttria-stabilized zirconia (YSZ) films have been grown on Si(100) substrates heated at 800°C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the heteroepitaxial growth of cubic YSZ (200) films on Si(100) substrates. The reflection high-energy electron diffraction of the films show that the <011 > and <010 > directions in the plane of cubic YSZ nearly coincide with the <010 > and <011 > directions of the Si substrate, respectively. Accordingly, (200)-oriented cubic YSZ could be exactly (<1%) lattice-matched to (100)-oriented Si substrates.

Zirconium dioxide (ZrO2) films have been grown on Si(100), Si(111), and SiO2/Si substrates heated at the range from room temperature to 800 °C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the epitaxial growth of tetragonal ZrO2(200) films on Si(100) substrates at 800 °C. The epitaxial imperfection is caused by preferentially oriented tetragonal ZrO2(002) grains. The crystalline system of ZrO2 films depends on the substrate temperature. The crystalline perfection and the orientation of tetragonal ZrO2 films grown at 800 °C depend on the substrate orientation.

Ultrahigh vacuum studies of Pd metal/insulator/semiconductor diode H2 sensors J. Vac. Sci. Technol. A 5, 2755 (1987); 10.1116/1.574735 Mechanism of hydrogen sensing in PdSi metalinsulatorsemiconductor diodes