We describe reactive-monolayer-assisted thermal nanoimprint lithography. The reactive monolayer inducing the graft reaction with thermoplastic poly(styrene) by ultraviolet light exposure was formed from 4-((10-mercaptodecyl)oxy)benzophenone on a gold thin film. The photochemical graft reaction suppressed the thermally induced dewetting of a poly(styrene) thin film on the modified gold surface. As a result, the poly(styrene) thin film used as a resist layer for wet etching could be patterned by thermal nanoimprint lithography, and 100-nm-scale patterns of a gold thin film could be prepared simply by wet etching.
When predicting the variation of pore structure during CO2 gasification of coal chars using the random pore
model (RPM), it is impossible to calculate exactly the ψ parameter from the pore characteristics, which were
obtained by means of N2 adsorption, such as BET surface area (denoted as N2 pore characteristics), of the
char prior to gasification. The values of ψ, which were calculated from the pore characteristics of chars at
various carbon conversions, should be fundamentally constant, unaffected by the conversion of the char.
However, this investigation exhibited a drastic decrease of ψ at the initial stage of the gasification reaction.
This phenomenon is the result of a significant increase of N2 pore characteristics, of which the starting chars
are extremely small. This increase might be explained by the widening of submicropores which are undetectable
through the N2 adsorption method or by the reopening of closed pores inaccessible even to helium molecules,
followed by the formation of new micropores exceeding the detection limit of N2. Consequently, this study
introduced the volume of submicropores and closed pores into the ψ equation as correction terms. The value
of ψ at the reaction starting point was close to that at the intermediate stage of reaction, indicating that the
accuracy for ψ estimation was elevated and that the submicropores and closed pores should be taken into
account when using RPM.
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