A low oxygen content silicon crystal ingot with 2.5×1017 to 3.5×1017 atoms·cm-3 was obtained. It was grown by using the Czochralski crystal growth furnace heated with a graphite heater connected to a three phase electrical source, and by controlling the seed and the crucible rotation in conjunction with the fluid rotation caused by the rotating magnetic field of the system. Neither bulk stacking faults after oxidation in wet oxygen at 1100°C for 2 hours, nor oxide precipitates after being annealed in an argon atmosphere at 1000°C for 12 hours, were observed in the crystal.

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Phosphorus-doped Czochralski (CZ) silicon crystals with less than 5% macroscopic radial and microscopic axial resistivity variations are grown in the presence of 1000 Oe vertical magnetic field strength. Crystals with extremely improved dopant homogeneity are facilitated by determining the appropriate crystal and crucible rotation rates corresponding to the residual thermal convection in the molten silicon. Experimental results can be consistently explained by flow model of forced and thermal convections which are stabilized by a magnetic field.