N-alkoxybenzyl aromatic polyamides were synthesized by polycondensation of N-alkoxybenzyl aromatic diamine with equimolar dicarboxylic acid chloride in the presence of 2.2 equiv. of pyridine at room temperature for 2 days. The obtained polyamides were mainly cyclic polymers, as determined by means of matrix-assisted laser desorption ionization time-of-flight (MALDI-TOF) mass spectrometry, and showed higher solubility in organic solvents than unprotected aromatic polyamides. Photodeprotection of N-alkoxybenzyl aromatic polyamide film containing photo acid generator (PAG) proceeded well under UV irradiation (5 J/cm 2 ), followed by heating at 130 • C for 15 min. The nature of the polymer end groups of N-alkoxybenzyl aromatic polyamides was found to be crucial for photodeprotection reactivity. These polymers are promising candidates for photosensitive heat-resistant materials for fine Cu wiring formation by electroless Cu plating of high-density semiconductor packaging substrates.

Photodeprotection of N-octyloxybenzyl aromatic polyamide film containing photo acid generator (PAG) was investigated. The photodeprotection was proceeded well under UV irradiation (365 nm, 5 J/cm 2), followed by heating at 130 °C for 15 min in the presence of 25 wt% of PAG. Line pattern of 30 to 20 μm on Si wafer was obtained from the photosensitive film after dipping into acetone. It turned out that N-alkoxybenzyl aromatic polyamides serve as a new photosensitive material in the presence of PAG.