We have investigated the interface of inAslGaSb and InAs/AISb grown by migration-enhanced epitaxy by photoluminescence and Raman spectroscopy. The significant effects of interface bonds, lnSb or GaAs (AlAs). on the luminescence as weii as phonon spectra are discussed. The confined phonon modes in both systems, inAslGaSb and InAsIAISb, are also compared to study the characteristic properties of lnAs heterostructures.

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This paper describes an experimental analysis of strained InAs/AlSb ultrathin-layer superlattices (ULSs) grown by MBE. Interface bonds of InSb or AlAs were selectively made in the ULSs by controlling the beam supply sequence during growth. Structural analysis was performed for ULSs on both InAs and AlSb buffer layers using Raman scattering. This analysis revealed that each constituent in the ULSs was relaxed individually only when the AlAs interface bond was combined with the AlSb buffer layer. Other combinations of the interface bond and buffer layer, however, resulted in a free-standing superlattice structure. These experimental results are consistent with the interface dependence of electron mobility reported for InAs/AlSb single quantum well structures.