We report the growth by molecular-beam epitaxy of GaAsSb crystals on GaAs (100) substrates. The composition of the alloyed crystals has been strongly dependent on the growth condition, especially on the substrate temperature and the arrival rates of arsenic and antimony molecules. Raman scattering measurements have been performed to characterize the grown layers, GaAsSb, and GaSb on GaAs substrates. In the GaSb/GaAs grown at relatively high temperatures, we observe the variation of composition near the heterointerface.

We have investigated the interface of inAslGaSb and InAs/AISb grown by migration-enhanced epitaxy by photoluminescence and Raman spectroscopy. The significant effects of interface bonds, lnSb or GaAs (AlAs). on the luminescence as weii as phonon spectra are discussed. The confined phonon modes in both systems, inAslGaSb and InAsIAISb, are also compared to study the characteristic properties of lnAs heterostructures.

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rlighly strained (InAs),(GaAs). super attices nave been grown by us ng migration ennanced epitaxy (MEEJ on InP(100) smstrales Opt cal propertoes of samples were st-oied by Raman scattering a n d photo.uminescence meas-rements to characterize the fine sdper anice StrLctUres. T h e etfects 01 MEE growth cond lion on tne per,odic Structdre are d ScJssed In conjLnction with the surface stoichiometry of growing layers Tne surface stoichiometry was studied oy ooserving the intensity oscillation of reflectdon hlgh energy electron o ffraclfon signals.

The thickness and refractive index of Zn1-xMgxO film grown on A-sapphire substrate by molecular beam epitaxy were measured by ellipsometry. Combined with Mg content measured by inductively coupled plasma (ICP), the curves showing the relationships of thickness with film growth condition and the refractive index with the Mg content in the film were deduced by numerical analysis, which may serve as a theoretical basis for controlling the thickness and the refractive index in Zn1-xMgxO film growth process.