The flame retardancy of cotton fabrics has been improved with treatment of phosphorous aqueous solution. In this study, cotton cellulose is treated with simple treatment and benign chemicals including an aqueous H 3 PO 3 solution dipping and heat annealing. The flame retardancy of the H 3 PO 3 treated cotton fabrics is enhanced to the degree that it is non-flammable. Thermogravimetric analysis results show that the residue increased up to about 50% at 800 8C by the treatment. Scanning electron microscopy exhibit some disconnection of fibers and the fibers are fragile. X-ray diffractometry reveal little damage to the crystalline structure of cellulose. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy show some portion of the added H 3 PO 3 reacted with cellulose components to be phosphorylated and dehydrated. The resulting data and analysis demonstrate that these dehydrated and phosphorylated moieties formed by treatment of phosphorous solution help accelerate the formation of char components, resulting in improved flame retardancy of cellulose materials.

Compatibility studies have been conducted for polyketone (PK) and styrene–acrylonitrile (SAN) blends in which SAN polymers have different acrylonitrile (AN) contents. Measurements of mechanical properties exhibit the immiscibility of PK/SAN blends. Glass transition temperature shifts and width broadening of the glass transition mean partial compatibility in the amorphous region of the PK/SAN blends. Peak shifts of the CO functional group are larger for PK/SAN48 than that of PK/SAN40 blend. In morphological observations, the dispersed domains appear more refined for the PK/SAN48 blend and the PK/SAN48 blend has better boundary adhesion between the two phases. The Flory–Huggins interaction parameters simulated for the PK/SAN mixture were at a low level and the PK/SAN48 blend showed lower values than the PK/SAN40 blend. This means that the PK/SAN polymer blend is partially compatible in the amorphous region. The level of compatibility tends to increase as the AN content of the SAN polymer increases. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020, 137, 48743.

To integrate circuits into the organic light emitting diode displays, it is necessary to fabricate polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on the glass substrates. In this work we investigated the correlation between the electrical characteristics and the poly-Si morphology of the excimer laser annealed (ELA) TFTs in ultralow oxygen concentrations (~ ppm). The main feature of ELA poly-Si films is the protrusion at grain boundaries that makes the film surface rough. The surface roughness increases with an increasing oxygen concentration during the laser annealing and degrades the TFT characteristics in the on-state as well as the breakdown voltage of the gate insulator, while the off current is independent of process conditions. This result is attributed to the increased oxygen incorporation in the film in the case of an ELA process. Since oxygen increased the defect density in the polysilicon bandgap, controlling the oxygen concentrations in the process chamber helped to improve the performance of the ELA poly-Si TFTs. Based on these results, we discuss the relationship between performance of active matrix organic light emitting display panels and oxygen concentrations during ELA.