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SiC is among the most promising materials for next generation power electronic devices due to its superior physical properties to Si and relative mature technology. SiC MOSFET is expected to offer performance improvement over Si counterpart. This paper presents the characterization of 1.2 kV SiC MOSFET, including its static and dynamic characteristics, and its high-frequency (1 MHz), high-power (1.2 kW) zerovoltage switching (ZVS) operation in a half-bridge parallel resonant converter. In comparison with SiC JFET and Si CoolMOS, the advantages and disadvantages of the SiC MOSFET are summarized. I.

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