A gain cell embedded dynamic random access memory (eDRAM) with a noble charge injection technique is presented. The gain memory cell is composed of dual-threshold two logic N-type MOSs implemented in a generic triple-well CMOS process. A negative-voltage toggle on the parasitic junction diode formed between the pocket p-well and the cell data node couples up the cell storage voltages. It results in a much enhanced retention time in a compact bit area. Moreover, the technique exhibits much strong immunity from the write disturbance. Measured results at 85°C from a 110 nm 64 kbit prototype eDRAM incorporating the proposed technique demonstrate 69% enhanced retention time and 86% smaller write disturbance loss compared with the conventional one.

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