A 60-GHz CMOS sub-harmonic RF transceiver with an integrated on-chip artificial-magnetic-conductor (AMC) Yagi-antenna and a balun-bandpass-filter (BPF) fabricated in 90-nm technology is presented. With the AMC structure, the radiation efficiency and power gain of the on-chip antenna can be increased. The on-chip balun-BPF combines the integrated design of the balun and RF BPF to reduce the circuit size and the insertion loss. The transmitter/receiver (T/R) switch with the leakage cancellation technique is used to increase the isolation between the T/R ports. The class-A power amplifier is utilized to achieve high linearity and power gain. The sub-harmonic receiver is adopted to mitigate the DC offset problem. The probe-station based on-wafer continuous wave (CW) wireless transmission test is conducted (R = 1 m). The measured total transmitting gain G ant+Tx and receiving conversion gain CG ant+Rx of the integrated RF transceiver (with the on-chip AMC antenna and the balun-BPF) are 5 dB and 10.1 dB at 60 GHz, respectively. In error vector magnitude (EVM) tests, the maximum data rates of the transceiver in 16QAM mode at a 50-cm wireless link have been investigated. The presented integrated RF transceiver will be very useful for the design of a 60 GHz fully integrated CMOS single-chip radio for very-short-range (VSR) communication applications.Index Terms -60-GHz, artificial-magnetic-conductor (AMC), balun-bandpass-filter (balun-BPF), CMOS single-chip radio, error vector magnitude (EVM), low-noise amplifier (LNA), power amplifier (PA), subharmonic mixer (SHM), T/R switch, very-short-range (VSR), Yagi-antenna.

This article presents a V‐band high‐isolation complementary metal‐oxide semiconductor (CMOS) single‐pole double‐throw transmitter/receiver (T/R) switch fabricated with TSMC standard 90‐nm 1P9M CMOS technology. A low insertion loss and high linearity are achieved using the body‐floating technique. In addition, the leakage cancellation technique is used to increase the isolation between the transmitter and receiver ports. The measured results show the insertion loss from the transmitter port to the antenna port is less than 3.5 dB, and the isolation between the transmitter and receiver ports is higher than 28 dB from 57 to 64 GHz. At the center frequency of 60 GHz, the port isolation is higher than 34 dB. The switch isolation has also been measured under the large signal test which is not reported in the previous works. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1118–1123, 2012

U-shape slots in transmission line is also proposed to suppress the spurious band and extra zeros are gotten. The measured results which are in good agreement of simulated results have demonstrated that the filter has compact size, good skirt selectivity characteristics as well as stopband rejection, and the spurious transmission is suppressed obviously. microstrip pseudointerdigital bandpass filters using a full-wave electromagnetic simulator, Microwave Millimeter-Wave Comput Aided Eng 7 (1997), 231-240. 5. J.S. Hong and M.J. Lancaster, Design of highly selective microstrip bandpass filters with a single pair of attenuation poles at finite frequencies, IEEE Trans Microwave Theory Tech 48 (2000), 1098-1103. 6. J.S. Hong and M.J. Lancaster, Couplings of microstrip square open-loop resonators for cross-coupled planar microwave filters,ABSTRACT: This article presents a V-band down-converting cascode mixer fabricated in the 0.13-lm CMOS process. The mixer utilizes the cascode topology and adds a buffer to avoid loading effects. The V-band mixer exhibits a conversion gain of À1.7 dB, an input 1-dB compression point of À8 dBm at RF of 60 GHz, IF of 5 GHz, and LO power of 0 dBm. The RF-IF isolation is more than 26 dB. The LO-RF isolation is more than 15 dB. In addition to the good agreement between simulation and measurement, the proposed cascode CMOS mixer with a small chip size has a complete measured performance for further 60-GHz receiver RF front-end integration.ABSTRACT: A simple all-optical add-drop multiplexer scheme is presented by utilizing cross gain modulation (XGM) and four-wave mixing (FWM) effects in a single semiconductor optical amplifier (SOA).When the synchronized data stream and control signal is launched into a SOA, FWM generates the dropped channel, while XGM is used to clean the corresponding bit slots for adding new data. This function is demonstrated at 10 Gbit/s by simulation and experiment. Both of them show good performance.