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A 60-GHz CMOS sub-harmonic RF transceiver with an integrated on-chip artificial-magnetic-conductor (AMC) Yagi-antenna and a balun-bandpass-filter (BPF) fabricated in 90-nm technology is presented. With the AMC structure, the radiation efficiency and power gain of the on-chip antenna can be increased. The on-chip balun-BPF combines the integrated design of the balun and RF BPF to reduce the circuit size and the insertion loss. The transmitter/receiver (T/R) switch with the leakage cancellation technique is used to increase the isolation between the T/R ports. The class-A power amplifier is utilized to achieve high linearity and power gain. The sub-harmonic receiver is adopted to mitigate the DC offset problem. The probe-station based on-wafer continuous wave (CW) wireless transmission test is conducted (R = 1 m). The measured total transmitting gain G ant+Tx and receiving conversion gain CG ant+Rx of the integrated RF transceiver (with the on-chip AMC antenna and the balun-BPF) are 5 dB and 10.1 dB at 60 GHz, respectively. In error vector magnitude (EVM) tests, the maximum data rates of the transceiver in 16QAM mode at a 50-cm wireless link have been investigated. The presented integrated RF transceiver will be very useful for the design of a 60 GHz fully integrated CMOS single-chip radio for very-short-range (VSR) communication applications.Index Terms -60-GHz, artificial-magnetic-conductor (AMC), balun-bandpass-filter (balun-BPF), CMOS single-chip radio, error vector magnitude (EVM), low-noise amplifier (LNA), power amplifier (PA), subharmonic mixer (SHM), T/R switch, very-short-range (VSR), Yagi-antenna.

This article presents a V‐band high‐isolation complementary metal‐oxide semiconductor (CMOS) single‐pole double‐throw transmitter/receiver (T/R) switch fabricated with TSMC standard 90‐nm 1P9M CMOS technology. A low insertion loss and high linearity are achieved using the body‐floating technique. In addition, the leakage cancellation technique is used to increase the isolation between the transmitter and receiver ports. The measured results show the insertion loss from the transmitter port to the antenna port is less than 3.5 dB, and the isolation between the transmitter and receiver ports is higher than 28 dB from 57 to 64 GHz. At the center frequency of 60 GHz, the port isolation is higher than 34 dB. The switch isolation has also been measured under the large signal test which is not reported in the previous works. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1118–1123, 2012

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