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Raman measurements on hydrogenated amorphous carbon are performed in order to complete a comprehensive view of the carbon matrix disorder in a‐C:H films. Hydrogenated amorphous carbon films are prepared by rf glow discharge. The changes in their microstructures due to the content of methane, the substrate bias voltage, and deposition fractional pressure are investigated using Raman scattering. These results reveal that the films tend to have a microcrystalline structure, the hydrogenation of the films is decreased corresponding to this structure change. The Raman scattering from amorphous carbon films shows several features, which are attributed to microcrystalline graphite‐like structures which all originate from the same region in the samples, the microcrystalline average domain size is obtained, too.

We report the successful synthesis of Ge clusters embedded in a-SiNy: H matrix prepared by the plasma enhanced chemical vapor deposition (PECVD) method. Chemical and microstructural characteristics of this granular thin film were analyzed using the infrared absorption, x-ray diffraction, Raman scattering, and transmission electron microscopy. Finally we discuss briefly the synthesis mechanism of this new material.