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Colloidal quantum‐dot light‐emitting diodes (QDLEDs) with the HfO2/SiO2‐distributed Bragg reflector (DBR) structure are fabricated using a pulsed spray coating method. Pixelated RGB arrays, 2‐in. wafer‐scale white light emission, and an integrated small footprint white light device are demonstrated. The experimental results show that the intensity of red, green, and blue (RGB) emission exhibited considerable enhancement because of the high reflectivity in the UV region by the DBR structure, which subsequently increases the use in the UV optical pumping of RGB QDs. A pulsed spray coating method is crucial in providing uniform RGB layers, and the polydimethylsiloxane (PDMS) film is used as the interface layer between each RGB color to avoid cross‐contamination and self‐assembly of QDs. Furthermore, the chromaticity coordinates of QDLEDs with the DBR structure remain constant under various pumping powers in the large area sample, whereas a larger shift toward high color temperatures is observed in the integrated device. The resulting color gamut of the proposed QDLEDs covers an area 1.2 times larger than that of the NTSC standard, which is favorable for the next generation of high‐quality display technology.

Post growth thermal annealing has been used to reduce the defect density of GaAs layers grown on Si substrates by molecular beam epitaxy. Transmission electron microscopy indicates a 100× reduction of the true defect density. Twins and stacking faults were eliminated entirely. Most misfit dislocations were confined within the first ∼150 Å GaAs layer and formed a regular and narrow network along the Si/GaAs interface. Similar results were obtained from an ion implanted and annealed specimen.