Quantitative analysis of the weak antilocalization (WAL) effect of topological surface states in topological insulators is of tremendous importance. The major obstacle to achieve accurate results is how to eliminate the contribution of the anisotropic magnetoconductance of bulk states when the Fermi level lies in bulk bands. Here, we demonstrate that we can analyze quantitatively and accurately the WAL effect of topological surface states in topological insulator, BiSbTeSe2 (BSTS), by measuring the anisotropic magnetoconductance. The anomalous conductance peaks induced by the WAL effect of topological surface states of BSTS together with the anisotropic magnetoconductance of bulk states have been observed. By subtracting the anisotropic magnetoconductance of bulk states, we are able to analyze the WAL effect of topological surface states using the Hikami–Larkin–Nagaoka expression. Our findings offer an alternative strategy for the quantitative exploration of the WAL effect of topological surface states in topological insulators.

Bandgap engineering offers opportunities for tailoring the properties of semiconductor materials for desired applications in microelectronics and optoelectronics. Alloys of different semiconductor materials can lead to the continuously tuning of the bandgap. Here, we report the bandgap engineering in layered InSe single crystals by substituting the Se atoms with S atoms. The formation of InS x Se 1−x single crystal alloy with x ≤ 0.3 is evidenced by the X-ray diffraction and resonant Raman spectra. The photoluminescence (PL) spectra peak position blue shifts from ∼1.27 to ∼1.42 eV as S composition increases from 0 to 0.3 in the alloys, which is consistent with the bandgap shifts calculated by density functional theory. Temperature dependence of the PL spectra indicate that the presence of S atoms decreases the strength of the electron−phonon interaction but increases the average phonon energy in InS x Se 1−x alloys. Our findings will open an intriguing avenue in understanding the fundamental physics in the III−VI layered semiconductor materials and their potential applications in optoelectronic devices.

The warehouse management system is a key part of the cigarette supply chain and controls the movement of goods within a warehouse. Having taken into account the features of cigarette warehouse management, this assay mainly introduced the basic structure and working principle of the warehouse management system based on RFID, compared the advantages of RFID with the traditional bar codes in the WMS, analyzed the managed objects and tasks in warehouse, brought forward the technological architecture and operation flow, and finally stated in detail the specific application of RFID in warehouse management system.