Today's electronic devices are expected to be fully function, low power consumption and high performance. There are more and more functional modules integrated in a SoC chip. A threedimension integrated circuit (3-D IC) is developed and in which two or more layers of active electronic components are integrated both vertically into a single circuit. In two-dimension IC, the memory size usually dominated and occupied the most of area. Besides, 3-D IC designs will deal with serious challenges in design space exploration and system validation. In this work, we analyze different system architectures, mainly the architecture of the stacking memory. To demonstrate our 3-D IC design techniques, the stacking memory approach is employed in our "3D-PAC (Parallel Architecture Core)" design. In 3D-PAC, we stack 512KB SRAM directly on top of the logic die which is heterogeneous multi-core computing platform for multimedia application purpose. Finally, we use ESL technology to demonstrate the performance improvement. The result shows that there is 34.89% of speed-up by using the stacking memory architecture.

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Today's embedded systems mostly target on portable devices, which are expected not only to be small, lightweight, fully functional, and real-time, but also to provide extremely long battery lifetime. Therefore, energy-efficiency has become a new challenge. Due to this reason, the power consumption is more and more important for the system on chip (SoC) design. In this paper, we discuss the 65nm DSP subsystem which provides a power optimized DSP subsystem for dual-core software development and SoC prototyping. The most important component of 65nm DSP subsystem is the 65nm Media Platform IC. In the 65nm Media Platform IC, the dynamic voltage & frequency scaling (DVFS) and power gating mechanism have been applied to reduce power dissipations with a novel Unified Power Format (UPF) flow. The 65nm Media Platform IC is fabricated in the TSMC 65nm CMOS technology, of which the estimated power dissipations are 40.97mW for 240MHz @1.0V and 56.47mW for 342MHz @1.2V respectively.

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