In Moiré fringe lithography alignment technology, alignment is realized by monitoring the grating interference fringe image in real-time. The technique exhibits excellent sensitivity to displacement changes and is not easily affected by the gap changes between the mask and silicon wafer. Therefore, this technique is widely used in conventional proximity and contact lithography and new-generation micro- and nanolithography systems. The rapid development of semiconductor and integrated circuit industries, as well as the increasing requirements for the resolution of various nanodevices and systems, have posed new challenges in Moiré fringe lithography alignment technology, which are mainly reflected in alignment accuracy, alignment range, and scheme complexity. In this study, the development history, alignment principle, and overall process of Moiré fringe lithography alignment technology are reviewed; the main factors affecting alignment accuracy are analyzed, and corresponding optimization schemes are provided; and finally, the development trend and research focus of Moiré fringe lithography alignment technology are predicted from the marking structure, alignment scheme, and algorithm processing.