Manganese Sulfide (MnS) thin films were prepared by thermal evaporation technique which deposited on a glass and silicon substrate. The deposited films were examined for their morphology and crystal structure by X-Ray Diffraction (XRD). The MnS heterojunction was successfully fabricated by using thermal evaporation technique at different temperature. The I-V properties of the heterogeneous MnS depend heavily on the structure. Silicon improves performance MnS shows good transparency in the spectral range 300-900 nm and the electrical properties of the system are highly dependent on the structure. The maximum value of the R (λ) spectral response of the MnS detection amplifier is 0.165 A/W at 450±50 nm. The maximum detection value of D (λ) was found around 2.359×10 12 (cm Hz-1/W) at 450±60 nm wavelength of the MnS optical amplifier.