No abstract

One-dimensional GaN nanostructure films were successfully synthesized by the recently developed sputtering post-nitridation technique. The morphology and structure of GaN nanowires are investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The results indicate that the crystalline GaN nanostructures have a hexagonal wurtzite structure, and there is not any other phase such as Ga2O3 or Ga in the specimen. It also confirms that high quality crystal was obtained in the resulting sample due to the lattice defects decreased and the crystallinity improved in the process of nitridation at high temperature. The growth mechanism of the GaN nanostructures is briefly discussed.

No abstract

Large area well-aligned ZnO nanowire arrays have successfully been synthesized on an unconventional substrate: stainless-steel mesh at a low growth temperature of 400oC. The as-grown ZnO nanowires have uniform diameters about 20 nm and a strong UV peak was observed in photoluminescence spectra. The growth method provides a novel way to produce high quality ZnO nanowire arrays, and can be also used to direct the controllable growth of other nanomaterials.