A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (>10(4)) with an average field effect mobility of ∼4.7 cm(2) V(-1) s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS2 /graphene interface, which is comparable to the MoS2 /metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.

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A method for transforming planar electronic devices into 3D structures under mechanically mild and stable conditions is demonstrated. This strategy involves diffusion control of acetone as a plasticizer into a spatially designed acrylonitrile butadiene styrene (ABS) framework to both laminate membrane-type electronic devices and transform them into a desired 3D shape. Optical, mechanical, and electrical analysis reveals that the plasticized region serves as a damper and even reflows to release the stress of fragile elements, for example, an Au interconnect electrode in this study, below the ultimate stress point. This method also gives considerable freedom in aligning electronic devices not only in the neutral mechanical plane of the ABS framework, which is the general approach in flexible electronics, but also to the top surface, without inducing electrical failure. Finally, to develop a prototype omnidirectional optical system with minimal aberrations, this method is used to produce a bezel-less tetrahedral image sensor.

To create ultrathin sticker‐type electronic devices that can be attached to unconventional substrates, it is highly desirable to develop printable membrane‐type electronics on a handling substrate and then transfer the printing to a target surface. A facile method is presented for high‐efficiency transfer printing by controlling the interfacial adhesion between a handling substrate and an ultrathin substrate in a systematic manner under mild conditions. A water‐soluble sacrificial polymer layer is employed on a dimpled handling substrate, which enables the topological confinement of the polymer residue inside and near the dimples during the etching and drying processes to reduce the interfacial adhesion gently, creating a high yield of transfer printing in a deterministic manner. As an example of an electronic device that was created using this method, a highly flexible sticker‐type ZnO thin film transistor was successfully developed with a thickness of 13 μm including a printable ultrathin substrate, which can be attached to various substrates, such as paper, plastic, and stickers.

Origami/kirigami of flexible electronics is a promising way to produce 3D electronics because well‐developed silicon‐based technologies can be used for the planar circuitry layout. However, it is still a challenge to enable general row and column control lines to develop 3D addressable sensory and display systems. This study addresses this issue via selective plasticization of an acrylonitrile butadiene styrene (ABS) film with N,N‐dimethylformamide (DMF) through polydimethylsiloxane (PDMS) microfluidic channels. The use of DMF provides plasticization in a controllable manner because of the fast absorption of the DMF in the liquid phase during the plasticization process, a prolonged retention time of DMF in the ABS film at room temperature during the transformation process, and fast desorption at 60– 80 °C for the deplasticization process. The use of microfluidic channels allows high‐resolution selective plasticization to enable extreme cases of local bending or even folding inward and outward, thereby enabling tucking‐based origami with no crack generation. The lamination of membrane‐type electronic devices to an ABS film followed by selective plasticization and transformation enables nondisruptive tucking‐based origami at the electronics level, such as for the demonstration of a hexahedral light‐emitting diode (LED) array with general row and column control lines.