Articles you may be interested inHigh quality HfO2/p-GaSb (001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness Appl. Phys. Lett. 105, 222103 (2014); 10.1063/1.4903068 Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack J. Vac. Sci. Technol. B 32, 03D116 (2014); 10.1116/1.4867170 Band offsets of metal-oxide-semiconductor capacitor with HfLaTaO/HfSiO stacked high-k dielectric

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions have been fabricated and their hot-carrier injection (HCI) reliability has also been investigated. The experimental results reveal that the HCI degradation of atomic layer deposition (ALD) HfSiON gate dielectrics is minimized at Hf : Si ¼ 1 : 3. Moreover, the experimental results also show that the increment of oxide trapped charges (ÁN ot ) depends on Hf content and is about one order of magnitude larger than that of interface traps (ÁN it ) after channel-hot-carrier (CHC) stress. Finally, some important interfacial parameters, including ÁN it , ÁD it , and ÁN ot , have also been characterized through the charge pumping (CP) technique.