2009
DOI: 10.1143/jjap.48.04c009
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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Abstract: Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions have been fabricated and their hot-carrier injection (HCI) reliability has also been investigated. The experimental results reveal that the HCI degradation of atomic layer deposition (ALD) HfSiON gate dielectrics is minimized at Hf : Si ¼ 1 : 3. Moreover, the experimental results also show that the increment of oxide trapped charges (ÁN ot ) depends on Hf content and is a… Show more

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Cited by 6 publications
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“…Now, it is more evident and widely accepted that negative bias temperature instability (NBTI) effect on threshold voltage is originated from two components; namely the interface-trap and the oxide-trap. [1][2][3][4] The relative contribution of interface and oxide traps to the threshold voltage shift after NBTI stress and recovery needs more experimental and theoretical investigation.…”
Section: Introductionmentioning
confidence: 99%
“…Now, it is more evident and widely accepted that negative bias temperature instability (NBTI) effect on threshold voltage is originated from two components; namely the interface-trap and the oxide-trap. [1][2][3][4] The relative contribution of interface and oxide traps to the threshold voltage shift after NBTI stress and recovery needs more experimental and theoretical investigation.…”
Section: Introductionmentioning
confidence: 99%