A method was developed for aligning interference fringes generated in interference lithography to the vertical {111} planes of <110> oriented silicon wafers. The alignment error is 0.036°. This high precision method makes it possible to combine interference lithography with anisotropic wet etch technique for the fabrication of high aspect ratio silicon gratings with extremely smooth sidewalls over a large sample area. With this alignment method, 320 nm and 2 μm period silicon gratings have been successfully fabricated. The highest aspect ratio is up to 100. The sample area is about 50 mm × 60 mm. The roughness (root mean square) of the sidewall is about 0.267 nm.

To eliminate the eccentricity effect, a new method for measuring the groove density of a variable-line-space grating was adapted. Based on grating equation, groove density is calculated by measuring the internal angles between zeroth-order and first-order diffracted light for two different wavelengths with the same angle of incidence. The measurement system mainly includes two laser sources, a phase plate, plane mirror, and charge coupled device. The measurement results of a variable-line-space grating demonstrate that the experiment data agree well with theoretical values, and the value of measurement error (ΔN/N) is less than 2.72 × 10(-4).

Near-field holography (NFH) combined with electron beam lithography (EBL)-written phase masks is a promising method for the rapid realization of diffraction gratings with high resolution and high accuracy in line density distribution. We demonstrate a dynamic exposure method in which the grating substrate is shifted during pattern transfer. This reduces the effects of stitching errors, resulting in the decreased intensity of the optical stray light (i.e., Rowland ghosts). We demonstrate the intensity suppression of ghosts by 60%. This illustrates the potential for dynamic NFH to suppress undesirable periodic patterns from phase masks and alleviate the stitching errors induced by EBL.